Deposition of Boron Doped Zinc Oxide Films and Their Electrical and Optical Properties

Boron doped zinc oxide films were deposited by atmospheric pressure chemical vapor deposition in a laminar flow reactor from diethyl zinc, tert-butanol, and diborane in the temperature range from 300 to 420 o C. When the deposition temperature was above 320 o C, both doped and undoped films have highly oriented crystallites with their c-axes perpendicular to the substrate plane