LEC Growth of InP Single Crystals Using Ceramics AlN Crucible

The liquid encapsulated Czochralski technique using a ceramics AlN crucible has been investigated for the growth of InP single crystals. High purity crystals, typically having a carrier concentration of 2.2×10 15 cm -3 and a Hall mobility of 30100 cm 2 /(V·s) at 77 K for the first-to-freeze portion, are grown without serious contamination of electrically active impurities from the crucible. Impurity analyses of the grown crystals and the B 2 O 3 encapsulants are carried out. The results are compared with those for the crystal grown from a pBN crucible.