兴奋剂
纳米颗粒
电化学
材料科学
电子结构
纳米技术
化学
光电子学
电极
物理化学
计算化学
作者
Shalendra Kumar,Garima Srivastava,Ghzzai Almutairi,Faheem Ahmed,Nagih M. Shaalan,S. Dalela,Rajesh Kumar,Avvaru Praveen Kumar,P. A. Alvi,Keun Hwa Chae,Hassan H. Hammud,Kavita Kumari
标识
DOI:10.1016/j.elspec.2021.147138
摘要
• Successful Synthesis of La doped BiFeO 3 nanoparticles. • Potential electrode-materials for supercapacitor applications. • The bandgap engineering of La doping BiFeO 3 nanoparticles. • Study pf electronic structural modification in La doped BiFeO 3 nanoparticles. • The Rietveld refinement of XRD patterns of La doped BiFeO 3 nanoparticles. We investigated the effect of La substitutional ions on the structural, optical, and electrochemical properties of bismuth ferrite (BiFeO 3 ) and used them as electrode materials for high performance supercapacitors. The compositions of 1.05 Bi 1-x La x FeO 3 (0.0 < x < 0.10) nanoparticles were prepared through sol-gel conventional route and denoted as 1.05 BiFeO 3 : BF0; 1.05 Bi 0.95 La 0.05 FeO 3 : BF5; 1.05 Bi 0.90 La 0.10 FeO 3 : BF10. The Rietveld refinement results of XRD patterns suggested the formation of rhombohedrally distorted perovskite structure (space group: R3c) with negligible secondary phase. The crystallite sizes determined using Scherrer’s formula were found to be in the 59−48 nm range and observed to decrease with an increase in La content. The bandgap measured using UV absorption spectroscopy was found to decrease with an increase in La content in BiFeO 3 . The SEM micrographs revealed that the prepared samples were composed of nanocrystalline grains with particle sizes ranging from 25 to 40 nm. The electronic structural modification has been confirmed by the XAS analysis of Fe L 3,2 and O K edge spectra as a result of La doping. Electrochemical measurements showed that 5% La-doped BFO (BF5) as an electrode demonstrated excellent performance for supercapacitors with a specific capacitance of 328 F g −1 measured with a scan rate of 10 mV s −1 . It also exhibited tremendous cyclic stability with capacitance retention of >97 % for 1000 cycles measured at 1A g −1 .
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