Fabrication and Characterization of High-Voltage NiO/β-Ga2O3 Heterojunction Power Diodes

非阻塞I/O 材料科学 化学 有机化学 催化作用
作者
Haoxun Luo,Xianda Zhou,Zimin Chen,Yanli Pei,Xing Lu,Gang Wang
出处
期刊:IEEE Transactions on Electron Devices [Institute of Electrical and Electronics Engineers]
卷期号:68 (8): 3991-3996 被引量:9
标识
DOI:10.1109/ted.2021.3091548
摘要

This work presents the fabrication and characterization of a high-performance vertical Nickel oxide (NiO)/Beta gallium oxide ( β-Ga 2 O 3 ) heterojunction p-n diode. The heterojunction was fabricated by sputtering a p-NiO thin film onto an epitaxial n - - β-Ga 2 O 3 drift layer. The sputtered NiO, revealed to be polycrystalline, showed an improved crystallinity after annealed in an oxygen ambient, while a seamless contact with the underneath single crystalline β-Ga 2 O 3 was observed. A high hole concentration of 1- 3×10 19 cm -3 and an improved Ohmic contact were also obtained by the annealing process, as confirmed by the Hall and TLM measurements, respectively. A high breakdown voltage ( V B ) of 1.4 kV and a low specific ON-resistance ( R on,sp ) of 2.7 mΩ·cm 2 were simultaneously achieved for the fabricated diodes, yielding a superior Baliga's figure-of-merit (BFoM) of 0.73 GW/cm 2 . From the temperature-dependent current-voltage ( I- V) measurements, two carrier transport mechanisms, namely interface recombination and multistep tunneling, have been identified in the forward conduction of the NiO/ β-Ga 2 O 3 heterojunction. The fast recovery property of the device, which was revealed by a double-pulse test, further confirmed the purposed carrier transport mechanisms.
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