神经形态工程学
材料科学
突触
记忆电阻器
突触可塑性
柔性电子器件
计算机科学
长时程增强
晶体管
纳米技术
光电子学
神经科学
人工神经网络
电子工程
电压
电气工程
人工智能
生物
工程类
生物化学
受体
化学
作者
Xing Deng,Siqi Wang,Yu‐Xiang Liu,Ni Zhong,Yuhui He,Hui Peng,Ping‐Hua Xiang,Chun‐Gang Duan
标识
DOI:10.1002/adfm.202101099
摘要
Abstract Designing transparent flexible electronics with multi‐biological neuronal functions and superior flexibility is a key step to establish wearable artificial intelligence equipment. Here, a flexible ionic gel‐gated VO 2 Mott transistor is developed to simulate the functions of the biological synapse. Short‐term and long‐term plasticity of the synapse are realized by the volatile electrostatic carrier accumulation and nonvolatile proton‐doping modulation, respectively. With the achievement of multi‐essential synaptic functions, an important sensory neuron, nociceptor, is perfectly simulated in our synaptic transistors with all key characteristics of threshold, relaxation, and sensitization. More importantly, this synaptic transistor exhibits high tolerance to the bending deformation, and the cycle‐to‐cycle variations of multi‐conductance states in potentiation and depression properties are maintained within 4%. This superior stability further indicates that our flexible device is suitable for neuromorphic computing. Simulation results demonstrate that high recognition accuracy of handwritten digits (>95%) can be achieved in a convolution neural network built from these synaptic transistors. The transparent and flexible Mott transistor based on electrically‐controlled VO 2 metal‐insulator transition is believed to open up alternative approaches to developing highly stable synapses for future flexible neuromorphic systems.
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