纳米点
压电响应力显微镜
极化(电化学)
铁电性
电场
材料科学
凝聚态物理
光电子学
拓扑(电路)
纳米技术
物理
电介质
化学
量子力学
电气工程
工程类
物理化学
作者
Zhongwen Li,Rui Bo,Hui Shen,Yi Lin,Guang Song,Yanzong Wang,Guannan Li,Feng Nan,Chao Wang,Yangjiang Wu,Zhengzhong Zhang,Hao Liu
摘要
Utilizing vector PFM (piezoresponse force microscopy) on high-density nanodot arrays, ferroelectric nanodots and domain structure in nanodot arrays were investigated in the current study. Accordingly, we identified four types of topological domain states based on the measurements of spontaneous polarization vectors vs writing results in nanodots. In addition to convergent and divergent domains with upward and downward polarization, double-center domains and triple-center domains were also identified. In addition, center domains could be reversibly switched under the electric field produced by the biased PFM tip, and their stability could be maintained by compensating the polarization charge with the accumulated charge. These stable topological domain states in discrete nanodots present an opportunity to further investigate their new properties in high-density memory devices.
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