铁磁性
凝聚态物理
磁电阻
量子隧道
隧道磁电阻
磁阻随机存取存储器
磁化
扭矩
材料科学
自旋(空气动力学)
铁磁性
物理
磁场
随机存取存储器
量子力学
计算机科学
计算机硬件
热力学
作者
Masahiko Yunokizaki,Yuki Hibino,Hiroshi Idzuchi,Hanshen Tsai,Mio Ishibashi,Shinji Miwa,Masamitsu Hayashi,S. Nakatsuji
标识
DOI:10.35848/1347-4065/ada1b8
摘要
Abstract Spin-orbit torque magnetization switching is studied in three terminal magnetic tunnel junctions with a ferrimagnetic Gd-Fe-Co free layer. Pt is used as a spin current generation layer and a Co-Fe-B synthetic antiferromagnet is used as the reference layer. A thin Fe-B layer is inserted between the Gd-Fe-Co free layer and the MgO barrier. The thickness of the Fe-B layer is varied from 4 to 12 Å. We find the tunnel magnetoresistance ratio increases with increasing Fe-B layer thickness until it saturates at ~14%, while the current density needed to reverse the magnetization of the Gd-Fe-Co/Fe-B layer via spin-orbit torque remains almost unchanged. The results highlight the effectiveness of the thin Fe-B layer to obtain sizable tunneling magnetoresistance and efficient spin-orbit-torque switching.
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