Model development of lattice-matched p-GaInP/i-GaAs/n-GaInP hetero-junction solar cell and its performance optimization

We report an analytical model for our proposed lattice-matched hetero-junction p-GaInP/i-GaAs/n-GaInP solar cell with the incorporation of AlInP cap layer and MgF2/TiO2 anti-reflection region supported by numerical data obtained using SENTAURUS TCAD. We investigate the impact of intrinsic layer thickness, cap layer thickness, compositional variation of gallium in GaInP alloy used in p- and n-regions of pin solar cell and also studied the effect of indium tin oxide (ITO) anode contact on photovoltaic performance of solar cell in terms of performance matrices i.e., open circuit voltage (Voc), short circuit current density (Jsc), fill-factor and power conversion efficiency (PCE). Also the performance of the proposed solar cell is optimized by judiciously choosing intrinsic layer thickness, and cap layer thickness. Our proposed device featuring 2.1-μm thick i-layer, 156-nm thick cap layer with Ga0.5In0·5P/GaAs active region yields a PCE of 19.89% which turns out to be 67% improvement as compared to the conventional solar cell enabling the proposed design attractive for photovoltaic applications.