材料科学
电阻率和电导率
电导率
空位缺陷
晶体缺陷
基质(水族馆)
光电子学
熔点
带隙
原子单位
宽禁带半导体
纳米技术
复合材料
结晶学
电气工程
化学
海洋学
物理
物理化学
量子力学
地质学
工程类
标识
DOI:10.1021/acs.cgd.3c00611
摘要
Owing to its high melting temperature, the 4H-SiC substrate exhibits numerous defects that are difficult to remove, hindering the development of large-scale, high electrical conductivity 4H-SiC substrates. This study constructs and analyzes atomic models of point defects in 4H-SiC, focusing mainly on Si and C atom vacancies and interstitial defects. Point defects in 4H-SiC can increase the electrical conductivity. For example, the Si0 vacancy has been found to enhance the electrical conductivity of a 4H-SiC unit cell by more than 220 times, converting its wide bandgap property to metallic. The research demonstrates that defects can improve 4H-SiC properties, paving the way for defect-selective technology to develop large-scale, high electrical conductivity 4H-SiC substrates.
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