多铁性
反铁磁性
凝聚态物理
电场
带隙
物理
极化(电化学)
联轴节(管道)
半导体
拓扑(电路)
材料科学
量子力学
铁电性
化学
组合数学
电介质
物理化学
冶金
数学
作者
Xilong Xu,Ting Zhang,Ying Dai,Baibiao Huang,Yandong Ma
出处
期刊:Physical review
日期:2022-11-28
卷期号:106 (20)
被引量:9
标识
DOI:10.1103/physrevb.106.205307
摘要
Coupling nontrivial topological physics to ferroelectricity in two-dimensional lattice is highly desirable in both fundamental research and devices applications. Here, using first-principles calculations, we report that in a multiferroic heterobilayer consisting of a antiferromagnetic layer MnSe and a ferroelectric layer ${\mathrm{In}}_{2}{\mathrm{S}}_{3}$, the typical type-III band alignment can be realized. Upon introduction of spin-orbit coupling, a band gap is created, giving rise to a nontrivial antiferromagnetic topological phase. By reversing ferroelectric polarization, the nontrivial antiferromagnetic topology of $\mathrm{MnSe}/{\mathrm{In}}_{2}{\mathrm{S}}_{3}$ can be annihilated, yielding a wide-gap antiferromagnetic semiconductor with trivial physics. It thus proves to be a feasible approach to realize purely electric-field control of antiferromagnetic topological physics in this heterobilayer. The physical mechanism of such phenomenon is further unveiled to be related to the interlayer charge transfer between the two layers. These findings shed light on the design and control of antiferromagnetic topological physics in two dimensions.
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