欧姆接触
材料科学
退火(玻璃)
制作
碳化硅
光电子学
激光器
碳化物
接触电阻
冶金
纳米技术
光学
物理
病理
替代医学
医学
图层(电子)
作者
Guo Li,Mingsheng Xu,De Gao Zou,Yingxin Cui,Yu Zhong,Peng Cui,Kuan Yew Cheong,Jinbao Xia,Hongkun Nie,Shuqiang Li,Handoko Linewih,Yanru Yin,Xiangang Xu,Jisheng Han
出处
期刊:Crystals
[MDPI AG]
日期:2023-07-16
卷期号:13 (7): 1106-1106
被引量:5
标识
DOI:10.3390/cryst13071106
摘要
In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divided into four aspects: laser process mechanism, ohmic contact electrode materials, and substrate materials. The effect of laser parameters on ohmic contact and the annealing process on SiC diode devices is also reviewed. Progress of other substrate materials, namely 6H-SiC and semi-insulating 4H-SiC-based devices with laser annealed ohmic contacts, is also briefly discussed, in which formation of semi-insulating SiC ohmic contacts is derived from laser irradiation at the interface to produce 3C-SiC. Some experiment results have been shown in the passage, such as XRD, SEM, TEM, etc. In the review, it points out that the direction of application and development of the laser annealing process for improving the ohmic contact of SiC power devices is highly encouraging.
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