Visible-light irradiation improved resistive switching characteristics of a 2D Cs2Pb(SCN)2I2-Based memristor device

Two-dimensional (2D) perovskite materials show enormous potential in optoelectronic applications owing to their exceptional thermal stability and unique lattice structures. However, research into anion-substituted 2D perovskites is relatively rare, particularly in the photoelectric information storage field. Here, an anion-based 2D perovskite Cs2Pb(SCN)2I2 film with high orientation and high thermal-stability is achieved by simple low-temperature solution processing and the memristor of Al/Cs2Pb(SCN)2I2/FTO is established. The experimental evidence shows that: 1) In the absence of light irradiation, memristors present typical bipolar resistance switching behaviour with On/Off resistance ratio (>103) and reliable retention (>104 s); 2) By introducing light irradiation, it can achieve a more dependable memristor with decreased RS fluctuation and improved cycling endurance. In addition, by modifying the compliance current (Icc), it can realize multi-level storage function of memories with good high temperature endurance. Finally, the logic gate function is also demonstrated with these cells. The operational principles of memristor devices are comprised of the charge trapping and conductive filament mechanisms. The light irradiation reduces the ion migration barrier and enhances the conductivity of perovskite films, thus limiting the excessive growth of conductive filaments. This work offers the groundwork for creating anionic two-dimensional perovskite photoelectric memristor devices.