Dynamic Dead-Time Compensation Method Based on Switching Characteristics of the MOSFET for PMSM Drive System

In order to effectively avoid the shoot-through issue of the semiconductor device (such as the power metal-oxide-semiconductor field-effect transistor (MOSFET)) adopted in the phase leg of the motor drives, a dead-time zone should be inserted. However, the nonlinearity caused by the dead-time effect will bring about voltage/current distortion, as well as high-order harmonics, which largely degrades the performance of motor drives, especially in low-speed operations with slight loads. In this paper, a dead-time compensation method is proposed to suppress such side effects caused by dead-time zones and improve the performance of motor drives. Compared with other existing methods, the proposed method is mainly focused on the switching characteristics of the power MOSFET, which is directly relative to the compensation time in each pulse-width modulation (PWM) period. Firstly, a detailed derivation process is elaborated to reveal the relationship between compensation time and the switching performance of the MOSFET. Meanwhile, the switching process of the MOSFET is also well analyzed, which summarizes the variations in the switching time of the MOSFET with a varied load current. Then, the multipulse test (MPT) is carried out to obtain accurate values of the switching time with the varied load current in a wide range (0–80 A) and form a 2D lookup table. As a result, the compensation method can easily be realized by combining the lookup table and linear interpolation based on the phase current of the motor dynamically. Finally, the effectiveness of the proposed method is verified based on a 12 V permanent magnet synchronous machine (PMSM) drive system. According to the relative experiment results, it can be clearly observed that the time-domain waveform distortion, high-order harmonics, and total harmonic distortion (THD) value are reduced significantly with the proposed dynamic compensation method.