晶体管
倍频器
铁电性
材料科学
电子工程
整流器(神经网络)
电子线路
光电子学
极化(电化学)
电气工程
电压
计算机科学
工程类
CMOS芯片
电介质
化学
循环神经网络
物理化学
机器学习
随机神经网络
人工神经网络
作者
Halid Mulaosmanovic,Evelyn T. Breyer,Thomas Mikolajick,Stefan Slesazeck
标识
DOI:10.1038/s41928-020-0413-0
摘要
Frequency multiplication is essential in wireless communication systems, where stable high-frequency oscillations are required. However, multipliers typically employ power- and area-hungry filtering and amplification circuits. Here, we show that a single ferroelectric field-effect transistor, made from ferroelectric hafnium oxide, can be used as a full-wave rectifier and frequency doubler. This is achieved by using the parabolic shape of the transistor’s transfer characteristics, which can be tailored by accurately tuning the partial polarization switching and the band-to-band tunnelling drain current. Due to the reversible polarization switching, our approach is fully reconfigurable, allowing either multiplication or simple transmission of the input frequency to be activated within a single ferroelectric transistor. With our devices, we also implement two practical cases of the frequency modulation scheme without any additional filtering circuits. A single ferroelectric field-effect transistor, which is made from ferroelectric hafnium oxide, can be used as a full-wave rectifier and frequency doubler.
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