肖特基势垒
肖特基二极管
闪烁噪声
材料科学
噪音(视频)
凝聚态物理
次声
热传导
等效串联电阻
光电子学
二极管
大气温度范围
物理
电压
噪声系数
热力学
计算机科学
图像(数学)
人工智能
复合材料
CMOS芯片
放大器
声学
量子力学
作者
Ya-Yi Chen,Yuan Liu,Yuan Ren,Zhaohui Wu,Li Wang,Bin Li,Yunfei En,Yiqiang Chen
标识
DOI:10.1142/s0217984921501347
摘要
In this paper, the forward bias conduction and low frequency noise (LFN) characteristics of GaN Schottky barrier diodes (SBDs) have been measured and studied in the temperature range from 300 K to 450 K. Based on I–V measured results, the temperature dependence of ideality factor and zero bias Schottky barrier height reveals the inhomogeneities of Schottky barriers at the metal-semiconductor (MS) interface. Further study of the LFN measured results shows that the flicker noise ([Formula: see text] noise) is the main component of LFN in GaN SBDs. The current dependence of LFN indicates the influences of the Schottky barrier and the series resistance on [Formula: see text] noise, and the temperature dependence of LFN is analyzed according to Luo’s model and the barrier inhomogeneities model.
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