太赫兹辐射
超短脉冲
材料科学
光电子学
神经形态工程学
光开关
皮秒
纳米光子学
硫系化合物
相(物质)
超材料
光子学
纳米技术
激光器
光学
计算机科学
机器学习
物理
人工神经网络
有机化学
化学
作者
Prakash Pitchappa,Abhishek Kumar,Saurav Prakash,Hariom Jani,Rohit Medwal,Mayank Mishra,Rajdeep Singh Rawat,T. Venkatesan,Nan Wang,Ranjan Singh
标识
DOI:10.1002/adfm.202100200
摘要
Abstract Phase change materials provide unique reconfigurable properties for photonic applications that mainly arise from their exotic characteristic to reversibly switch between the amorphous and crystalline nonvolatile phases. Optical pulse based reversible switching of nonvolatile phases is exploited in various nanophotonic devices. However, large area reversible switching is extremely challenging and has hindered its translation into a technologically significant terahertz spectral domain. Here, this limitation is circumvented by exploiting the semiconducting nature of germanium antimony telluride (GST) to achieve dynamic terahertz control at picosecond timescales. It is also shown that the ultrafast response can be actively altered by changing the crystallographic phase of GST. The ease of fabrication of phase change materials allows for the realization of a variable ultrafast terahertz modulator on a flexible platform. The rich properties of phase change materials combined with the diverse functionalities of metamaterials and all‐optical ultrafast control enables an ideal platform for design of efficient terahertz communication devices, terahertz neuromorphic photonics, and smart sensor systems.
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