Tailoring switching field of phase transition for enhancing energy-storage density of PLZST antiferroelectric thick films

In this paper, Pb0.98La0.02(Zr0.55Sn0.45-xTix)0.995O3 (x = 0.02–0.08) (PLZST) antiferroelectric (AFE) thick films were fabricated by a unique technology of the rolling process, which will contribute to high BDS. It manifests that the energy-storage parameters, such as dielectric constant, BDS, and switching field, are easily tailored by the Ti content variation at B site. It’s found that the BDS and the switching field of phase transition achieve the maximum in the case of 2 mol% Ti of PLZST, which reaches the best recoverable energy density of 5.7 J/cm3. Besides, this work reveals that the switching field has a more essential effect on the energy-storage density than other parameters at the same BDS when the BDS is higher than the switching field. The results show that one idea for promoting the dielectric energy-storage applications is to find dielectric materials with high switching field and providing one solution for some high energy-storage applications with low electric-field.