石墨烯
材料科学
整改
兴奋剂
光电子学
量子隧道
拉曼光谱
接触电阻
氧化物
二极管
图层(电子)
电极
纳米技术
制作
阻挡层
等效串联电阻
电气工程
化学
光学
病理
物理化学
电压
工程类
冶金
医学
替代医学
物理
作者
Muhammad Atif Khan,Servin Rathi,Inyeal Lee,Lijun Li,Dongsuk Lim,Moonshik Kang,Gil‐Ho Kim
摘要
In this work, we fabricated multi-layer WSe2 rectifying diodes using graphene oxide (GO) as p-doping material on one side of the contacting electrodes. This GO layer can reduce the contact resistance by forming a tunneling barrier for efficient hole injection, while it increases the contact resistance for the injection of electrons. Results of Raman shift spectra and the opto-electric response of the device confirmed the p-doping effect caused by the GO layer and the formation of a barrier, respectively. We observed a gate tunable rectification effect with a forward/reverse current ratio of 104 and low reverse bias current of 10−10 A. Applying a GO layer in the fabrication of two-dimensional transition metal dichalcogenides based devices is a very useful method in the applications in future nanotechnologies.
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