外延
铟
杂质
碘化物
砷化铟
材料科学
碘
砷化镓
光电子学
化学工程
结晶学
无机化学
化学
纳米技术
冶金
有机化学
图层(电子)
工程类
作者
E. F. Trifonova,L. Karagiozov,L. Hitova
标识
DOI:10.1002/crat.2170181104
摘要
Abstract Bulk crystals and epitaxial layers have been prepared from iodidely synthesized InAs. Their parameters have been studied and compared with those of high‐temperature synthesized InAs. The synthesis mixture composition substantially effects the electrical parameters of the samples. Iodine is supposed to be a donor‐acting impurity in iodidely synthesized InAs.
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