暗电流
光电探测器
物理
红外线的
量子点
兴奋剂
凝聚态物理
光电子学
光学
作者
V. Ryzhii,I. Khmyrova,V. I. Pipa,Vladimir Mitin,M. Willander
标识
DOI:10.1088/0268-1242/16/5/309
摘要
We propose a device model for quantum dot infrared photodetectors (QDIPs) with relatively large lateral spacing between QDs as occurs in QDIPs fabricated and experimentally investigated recently. The developed model accounts for the self-consistent potential distribution and features of the electron capture and transport in realistic QDIPs in dark conditions. The model is used for the calculation of the dark current as a function of the structural parameters, applied voltage and temperature. It explains a rather sharp increase in the dark current with increasing applied voltage and its strong sensitivity to the density of QDs and the doping level of the active region. The calculated dependences are in good agreement with available experimental data. The obtained characteristics of QDIPs are compared to those of QWIPs with similar parameters.
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