Infrared Spectroscopic Study on the Surface Properties of γ-Gallium Oxide as Compared to Those of γ-Alumina

化学 乙腈 加合物 路易斯酸 无机化学 吡啶 吸附 红外光谱学 氧化物 物理化学 有机化学 催化作用
作者
Alexandré Vimont,J.C. Lavalley,A. Sahibed‐dine,C. Otero Areán,M. Rodrı́guez Delgado,Marco Daturi
出处
期刊:Journal of Physical Chemistry B [American Chemical Society]
卷期号:109 (19): 9656-9664 被引量:91
标识
DOI:10.1021/jp050103+
摘要

By hydrolysis of an ethanolic gallium nitrate solution, gamma-Ga2O3 was prepared as a single-phase polymorph having a specific surface area of 160 m2 g(-1). Surface acidity and basicity of this material was studied by IR spectroscopy, using pyridine, 2,6-dimethylpyridine, acetonitrile, and carbon dioxide as spectroscopic probe molecules. For comparison, a gamma-Al2O3 sample having a surface area of 290 m2 g(-1) was also studied. On partially hydroxylated gamma-Ga2O3, the main O-H stretching bands were found at 3693 (sharp) and at 3660-3630 cm(-1) (broad), and the material proved (by adsorbed dimethylpyridine) to have a weak Brønsted acidity. Surface Lewis acidity of gamma-Ga2O3 was revealed (mainly) by adsorbed pyridine, which gave the characteristic IR absorption bands of Lewis-type adducts at 1612, 1579, 1488, and 1449 cm(-1) (values noted under an equilibrium pressure of 1 Torr at room temperature); the corresponding Lewis acid centers (coordinatively unsaturated Ga3+ ions) were found to be weaker, although more abundant, than those present on the surface of gamma-Al2O3 (unsaturated Al3+ ions). Another significant difference between gamma-Ga2O3 and gamma-Al2O3 is the smaller thermal stability of pyridine and 2,6-dimethylpyridine Lewis adducts formed on the gallium oxide. The surface basicity of gamma-Ga2O3 was studied by using carbon dioxide and deuterated acetonitrile as IR probe molecules. Adsorbed CO2 gave carbonate and hydrogen-carbonate surface species similar to those formed by gamma-Al2O3. Adsorbed acetonitrile gave rise to acetamide species, which revealed the basic character of surface O2- ions. These acetamide species were found to be more abundant on gamma-Ga2O3 than on gamma-Al2O3.
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