钽
化学气相沉积
氧化剂
退火(玻璃)
化学计量学
分析化学(期刊)
化学成分
氧气
材料科学
化学
无机化学
冶金
纳米技术
有机化学
作者
Toshiya Tabuchi,Yoshinori Sawado,Kunimasa Uematsu,Shohei Koshiba
标识
DOI:10.1143/jjap.30.l1974
摘要
Penta-di-methyl-amino-tantalum (Ta[N(CH 3 ) 2 ] 5 ), a new source chemical of Ta in TaO chemical vapor deposition (CVD), has been studied. TG and DTA measurements show that Ta[N(CH 3 ) 2 ] 5 is chemically stable up to about 150°C and vaporizes at a temperature of 80°C. TaO films were deposited by LP-CVD at temperatures of 380∼520°C, by using the new chemical Ta[N(CH 3 ) 2 ] 5 and O 2 . The deposition rate of TaO with Ta[N(CH 3 ) 2 ] 5 is higher than that with Ta(OC 2 H 5 ) 5 , a conventional Ta source. The TaO CVD using Ta[N(CH 3 ) 2 ] 5 and O 2 yields a good step coverage. Although the as-deposited TaO films are oxygen poor in film composition, annealing in an oxidizing ambient improves the stoichiometry and reduces the leakage current.
科研通智能强力驱动
Strongly Powered by AbleSci AI