Preparation of nitrogen and sulphur Co-doped reduced graphene oxide (rGO-NS) using N and S heteroatom of thiourea

杂原子 石墨烯 硫脲 氧化物 傅里叶变换红外光谱 掺杂剂 剥脱关节 扫描电子显微镜 氧化石墨 兴奋剂 水热合成 材料科学 化学 核化学 热液循环 纳米技术 化学工程 有机化学 冶金 戒指(化学) 光电子学 复合材料 工程类
作者
Refada Adyansya Rochman,Sayekti Wahyuningsih,Ari Handono Ramelan,Qonita Awliya Hanif
出处
期刊:IOP conference series [IOP Publishing]
卷期号:509: 012119-012119 被引量:117
标识
DOI:10.1088/1757-899x/509/1/012119
摘要

Graphene oxide (GO) has been synthesized via modified Hummer's method with graphite powder as a starting material. The synthesized reduced graphene oxide (rGO) was prepared by GO as a precursor. Synthesis of rGO-NS was performed by hydrothermal method using a dopant thiourea as nitrogen (N) and sulphur (S) donors with the ratio of GO: thiourea = 1:10, 1:15, and 1:20 (w/w), respectively. Characterization using Fourier Transform Infra-Red (FTIR) spectroscopy shows several peaks that have an agreement with −OH, C=O, C=C, C-OH, and C-O functional groups for GO and absorption peaks of −OH, C=C, and CO functional groups for rGO with different intensity, while modified materials of variation rGO-NS emerged typical absorptions of −OH, C=C, C=N, C-N, and C-S functional groups. GO and rGO material that have been analysed using X-Ray Diffraction (XRD) shows a dominant peak at 2θ 10.77° (001) and 24.97° (002), respectively. While the distance between layers (dSpacing) on rGO (3,56 Å) was lower than GO (8,22 Å). Compared to rGO, XRD analysis also shows that the addition of N and S on GO structure caused shifting of 2θ in 23,73°-24,06° (002) and calculated dspacing of rGO-NS is found to be 3,70 Å−3,74 Å. Morphological observation of rGO-NS using Scanning Electron Microscopy (SEM) shows that rGO-NS is a thin transparent sheets formed because the exfoliation process of GO material.
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