极紫外光刻
抵抗
平版印刷术
下一代光刻
多重图案
材料科学
极端紫外线
X射线光刻
光刻
计算光刻
浸没式光刻
纳米技术
光学
光电子学
电子束光刻
物理
激光器
图层(电子)
作者
Harry Levinson,Timothy A. Brunner
摘要
The semiconductor industry is on the threshold of using extreme ultraviolet (EUV) lithography in high volume manufacturing (HVM). Nevertheless, there are several areas where improvement in this lithographic technology would be very beneficial, most notably exposure tool reliability (particularly the light source) and mask contamination. These areas have important consequences for productivity. Future generations of EUV lithography are expected, but there are several challenges to be overcome, particularly in the areas of resists and computational lithography. A replacement for chemically amplified resists may be required. Regardless of resist type, exposure doses must be sufficiently high to prevent photon shot noise from causing high levels of yield loss. Computational lithography for next generation EUV lithography will be very complex.
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