Simulation research on wafer warpage and internal stress in the First Passivation process of eSiFO package

In the electronics packaging process, warpage and thermal stress are two important causes which lead to packaging failure. In this paper, ABAQUS is used to perform three-dimensional numerical simulation of eSiFo packaging products from the thermodynamic point of view. The effects of different structural parameters on wafer warpage and thermal stress in electronic packages are simulated. In the simulation part, single factor analysis, Taguchi orthogonal experiment design and finite element analysis are combined to obtain the optimized process parameters and perform simulation analysis. The result shows that the structural parameter that has the greatest influence on the von Mises stress value of the wafer is the window size. And the structural parameter that has the greatest influence on the wafer warpage is the Die thickness. The thickness of the adhesive layer and the thickness of the passivation layer have a relatively small effect on the von Mises stress and the warpage value of the wafer. Under the optimized process parameters, the maximum von Mises stress and the maximum warpage value are much smaller than the initial process.