High-Performance Photodetectors with an Ultrahigh Photoswitching Ratio and a Very Fast Response Speed in Self-Powered Cu2ZnSnS4/CdS PN Heterojunctions

光电子学 材料科学 异质结 光电探测器 比探测率 电容 捷克先令 半导体 光电效应 光电导性 光电流 响应度 光探测 光伏系统 太阳能电池 物理 电气工程 工程类 量子力学 电极
作者
Hongzhu Wu,Changkun Ma,Jiyue Zhang,Hechun Cao,Ruobing Lin,Wei Bai,Zengxiang Pan,Jing Yang,Yuanyuan Zhang,Ye Chen,Xiaodong Tang,Xudong Wang,Jianlu Wang,Junhao Chu
出处
期刊:ACS applied electronic materials [American Chemical Society]
卷期号:3 (9): 4135-4143 被引量:10
标识
DOI:10.1021/acsaelm.1c00597
摘要

Cu2ZnSnS4 (CZTS) has been extended to the field of photodetection owing to its outstanding optoelectronic properties. However, the existence of the ineluctable defects in CZTS semiconductors affects and even determines the optoelectric processes including carrier generation, relaxation, transfer, and recombination. Moreover, photoresponse correlated to the defects in CZTS photodetectors has not well been documented and the possible physics mechanism is still unexplored. High-performance and self-powered PN heterojunction photodetectors are built from Cu2ZnSnS4 and CdS films. The devices exhibit a steady rectifying behavior and a prominent photovoltaic effect. The peak values of responsivity and detectivity are 220 mA W–1 and 2.69 × 1010 Jones, respectively. A very fast response speed with rising and decay times of up to 18 and 19 μs and an ultrahigh photoswitching ratio beyond 104 are demonstrated in these photodetectors. An abnormal dependence of the light response parameters on the incident power and temperature is found in these devices. This anomaly is explained by the formation of the defects and/or defect dipoles, which are evidenced by the temperature dependence of the photocurrent, the dependence of the capacitance on the bias voltage at different temperatures, and the derivative of capacitance with temperature.
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