空位缺陷
硫化物
材料科学
化学物理
镓
结晶学
凝聚态物理
单层
分子物理学
化学
纳米技术
物理
冶金
作者
Tao Zhang,Ying Liang,Hao Guo,Tian C. Zhang,Haidong Fan,Xiaobao Tian
摘要
Interactions between vacancy defects and their localized size in defective GaS monolayer are investigated and a vacancy defect cluster model is proposed with considering these interactions.
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