AgNbO3 antiferroelectric film with high energy storage performance

Antiferroelectric materials with double hysteresis loops are attractive for energy storage applications, which are becoming increasingly important for power electronics nowadays. Among them, AgNbO3 based lead-free ceramics have attracted intensive interest as one of promising environmental-friendly candidates. However, most of the AgNbO3 based ceramics suffers from low dielectric breakdown strength (Eb). The limitation of low Eb is broken to some extent in this work. Here, AgNbO3 epitaxial films were fabricated by pulsed laser deposition, which possess high Eb of 624 kV/cm. The (001)AgNbO3 epitaxial film reveals typical antiferroelectric hysteresis loops when the applied electric fields are over 300 kV/cm. A recoverable energy density of 5.8 J/cm3 and an energy efficiency of 55.8% are obtained at 600 kV/cm, which demonstrates the great promise of the AgNbO3 film for energy storage applications.