Structural and electrical properties of In6Se7thin films

In6Se7 thin films of different thicknesses were prepared by the thermal deposition technique. Structural studies show that In6Se7 thin films have a polycrystalline nature of the monoclinic phase: its lattice parameters a, b, c and β were calculated for the first time. The thermoelectric power (TEP) measurements indicate that the investigated films are n-type semiconductors. Both the resistivity and the TEP measurements indicate the existence of one conduction mechanism. The temperature coefficient of activation energy, the free charge carrier concentration, the carrier mobility and the grain boundary barrier potential were evaluated. The dark I–V and C–V characteristics of n-In6Se7/p-Si heterojunction at different temperatures were performed. The internal junction parameters were calculated and the existence of the multi-step tunnelling mechanism was confirmed.