钇
材料科学
化学计量学
离子
分析化学(期刊)
蚀刻(微加工)
辐照
冶金
化学
复合材料
氧化物
色谱法
图层(电子)
物理化学
核物理学
有机化学
物理
作者
Tetsuya Goto,Yoshitaka Shiba,Akinobu Teramoto,Yukio Kishi,Shigetoshi Sugawa
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2020-06-11
卷期号:38 (4)
被引量:5
摘要
Yttrium oxyfluoride was developed for use in the plasma process chamber using various corrosive gases. In this paper, sintered yttrium oxyfluorides with various Y, O, and F composition ratios (YxOyFz) and ion-plated YOF and Y5O4F7 films were prepared, and the physical etching behavior due to Ar ion bombardment and NF3/Ar plasma resistance was investigated. It was found that the etching rate of the sintered yttrium oxyfluoride due to the bombardment of Ar ions with an energy of 500 eV decreased as the oxygen composition ratio in the samples decreased, i.e., F-rich yttrium oxyfluoride had better resistance against energetic-ion bombardment. It was also found that the surface roughness of sintered YOF and Y5O4F7, both of which had the stable phases, was much smoother after Ar ion bombardment than that of yttrium oxyfluorides without the stable phase. NF3/Ar plasma resistance was also investigated. For the sintered yttrium oxyfluoride, both YOF and Y5O4F7 showed good resistance against the NF3/Ar plasma, where the ideal stoichiometric atomic composition ratio could be kept even after plasma irradiation. For both as-deposited ion-plated YOF and Y5O4F7 films, the F composition ratio was slightly smaller than the ideal stoichiometric ratios, suggesting that some amount of fluorine was escaped from the starting materials of YOF and/or Y5O4F7 during the ion-plated film deposition processes. After NF3/Ar plasma irradiation, F composition ratios were increased for both ion-plated YOF and Y5O4F7 films, and the atomic composition ratio becomes closer to the ideal stoichiometric ratios for both films.
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