In-situ passivation perovskite targeting efficient light-emitting diodes via spontaneously formed silica network

Perovskite materials are attractive candidates as emitting layers in light-emitting diodes due to their excellent optical and electrical properties. Effective charge radiative recombination is a key to target high-efficiency perovskite light-emitting diodes (PeLEDs). State-of-the-art effective passivation chemicals in PeLEDs mostly belong to organic chelating molecules, associated with like molecular detachment in the device operation, which simultaneously degrades the performance especially the operational stability of the devices. Here, a silane material tetraethoxysilane (TEOS), which can be crosslinkable to avoid any likely detachment from perovskite film, is incorporated into the perovskite film to enhance film radiative recombination and stability. An oxo-bridged silica network anchored with perovskite is formed after the TEOS in-situ crosslinking process. It is found that the lone pair electrons in TEOS network can coordinate with the undercoordinated Pb2+ of perovskite. Consequently, defect states in perovskite film are dramatically diminished, which enhances radiative recombination. The photoluminescence intensity of resultant perovskite-TEOS film is enhanced by 40% over that of the pristine one. The average photoluminescence lifetime of perovskite-TEOS film reaches 58 ns, enhanced by 65% over that of the pristine perovskite film of 35 ns.. As a result, a green PeLED achieved an external quantum efficiency of 16.6% with improved working stability. This work presents a facile strategy targeting efficient and stable perovskite devices via utilizing detachment-free self-crosslinked ligands.