放大器
变压器
宽带
CMOS芯片
带宽(计算)
计算机科学
电气工程
物理
电子工程
拓扑(电路)
电信
光电子学
工程类
电压
作者
Xuan Hui Wu,Milad Kalantari,Dong Hun Shin,C. Patrick Yue
出处
期刊:2018 IEEE MTT-S International Wireless Symposium (IWS)
日期:2019-05-01
卷期号:: 1-3
被引量:7
标识
DOI:10.1109/ieee-iws.2019.8804024
摘要
A broadband low noise amplifier (LNA) for a high data rate 5G millimeter-wave communication system is proposed. Designed in a general purpose 65-nm CMOS process, the LNA consists of a differential g m -boosted common-gate (CG) stage followed by an open-source follower buffer. A novel compact three-coil transformer is employed to perform single-ended to differential conversion, broadband input matching, g m -boosting and noise suppression at the LNA input. A transformer-based inter-stage couple network is used to broaden the overall amplifier bandwidth and to convert the differential signal to a single-ended output. The proposed LNA achieves a power gain of 15 dB with a 3-dB bandwidth of 8.9 GHz (ranging from 23.3 to 32.2 GHz), and a noise figure between 3-3.8 dB. The input S 11 remains below -13.9 dB in the passband while the IIP 3 is better than -1.7 dBm. The LNA consumes 13.5 mW from a 1.2 V supply.
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