系统间交叉
准分子
电致发光
有机发光二极管
量子效率
材料科学
单重态
光化学
消灭
光电子学
化学
激发态
原子物理学
荧光
纳米技术
光学
物理
量子力学
图层(电子)
作者
Jeannine Grüne,Nikolai Bunzmann,Moritz Meinecke,Vladimir Dyakonov,Andreas Sperlich
标识
DOI:10.1021/acs.jpcc.0c06528
摘要
Organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) show increased efficiencies due to efficient upconversion of nonemissive triplet states to emissive singlet states via reverse intersystem crossing (RISC). To assess the influence of the characteristic efficiency-enhancing RISC process as well as possible efficiency-limiting effects on operational OLEDs, we performed temperature-dependent measurements of transient electroluminescence (trEL). With kinetic modeling, we quantify and separate the impact of different temperature-dependent depopulation processes and contributions to EL in the established donor:acceptor model system m-MTDATA:3TPYMB. The underlying rate equations adapted for EL measurements on TADF systems include radiative and nonradiative first- and second-order effects. In this way, we are able to evaluate the nonradiative recombination and annihilation processes with respect to their efficiency-limiting effects on these OLEDs. On the one hand, we evaluate the depopulation of intermolecular exciplex triplet states via nonradiative direct triplet decay, RISC, and triplet–triplet annihilation (TTA). On the other hand, we determine the contribution to EL from the formation of singlet exciplex states via polarons, RISC, and TTA. Our results show that TTA accounts for a significant part of triplet depopulation and contributes to EL while limiting the overall device quantum efficiency.
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