材料科学
外延
电阻率和电导率
钒
带隙
氧化钇稳定氧化锆
椭圆偏振法
晶体结构
结晶学
金属
分析化学(期刊)
薄膜
陶瓷
纳米技术
光电子学
立方氧化锆
冶金
化学
图层(电子)
电气工程
工程类
色谱法
作者
Songhee Choi,Sung‐Jin Chang,Junhyeob Oh,Jae Hyuck Jang,Shinbuhm Lee
标识
DOI:10.1002/aelm.201700620
摘要
Abstract Vanadium dioxide (VO 2 ) polymorphs have many interesting physical and chemical properties that are crystal‐structure dependent. It is reported that polymorphic (010)VO 2 (M1), (100)VO 2 (A), and (100)VO 2 (B) can be epitaxially grown on (001)‐, (011)‐, and (111)‐oriented Y‐stabilized ZrO 2 (YSZ), respectively. While VO 2 (M1) shows a typical metal–insulator transition near 68 °C, and VO 2 (B) exhibits insulating behavior, the resistivity of VO 2 (A) is lower by three orders of magnitude than that of (100)VO 2 (A) epitaxial films previously grown on (011)SrTiO 3 . Ellipsometry reveals that the bandgap of VO 2 (A) also decreases. Each VO 2 polymorphic film grown on cost‐effective YSZ will be of great interest for numerous electronic and energy applications.
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