纳米线
纳米结构
异质结
纳米技术
材料科学
光子学
外延
数码产品
光电子学
半导体纳米结构
硅
电气工程
工程类
图层(电子)
作者
Xiaoming Yuan,Dong Pan,Yijin Zhou,Xutao Zhang,Kun Peng,Bijun Zhao,Mingtang Deng,Jun He,Hark Hoe Tan,C. Jagadish
出处
期刊:Applied physics reviews
[American Institute of Physics]
日期:2021-04-02
卷期号:8 (2)
被引量:97
摘要
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays in a fully controllable way and is thus of great interest in both basic science and device applications. Here, an overview of this promising technique is presented, focusing on the growth fundamentals, formation of III–V nanowire arrays, monolithic integration of III–V nanowire arrays on silicon, the growth of nanowire heterostructures, and networks of various shapes. The applications of these III–V nanostructure arrays in photonics, electronics, optoelectronics, and quantum science are also reviewed. Finally, the current challenges and opportunities provided by SAE are discussed.
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