Experimental study of 1064nm CW laser ablation biased silicon-based PIN photodiodes

The photoelectric detector is a very significance part in laser and its application system, but when photoelectric detector irradiated by high energy laser, the laser may cause thermal damage to the photoelectric detector, when the temperature more than its melting point and vaporization point ,there will be a permanent damage in PIN photodetector, leading to the failure of photoelectric detector. In order to study the photodiode damage mechanism by 1064nm CW laser irradiation, a set of experimental system has been built, choosing appropriate laser power parameters to irradiate silicon-based PIN photodiode and monitoring the surface temperature in the process of irradiation, until the PIN photodiode complete failure. The measurement results of real-time temperature, dark current change and damage morphology were analyzed to conclude the failure reason of the PIN photodiode. The results show that with the increase of laser power, the surface temperature of PIN photodiode also increases, and the damage area increases gradually. Before laser irradiation, the initial dark current of PIN photodiode is the same.