材料科学
电阻随机存取存储器
比较器
记忆电阻器
纳米技术
光电子学
非易失性存储器
电压
电子工程
电气工程
工程类
作者
Liangchao Guo,Boyuan Mu,Ming-Zheng Li,Baidong Yang,Ruosi Chen,Guanglong Ding,Kui Zhou,Yanhua Liu,Chi‐Ching Kuo,Su‐Ting Han,Ye Zhou
标识
DOI:10.1021/acsami.1c11014
摘要
Two-dimensional MXene has enormous potential for application in industry and academia owing to its surface hydrophilicity and excellent electrochemical properties. However, the application of MXene in optoelectronic memory and logical computing is still facing challenges. In this study, an optoelectronic resistive random access memory (RRAM) based on silver nanoparticles (Ag NPs)@MXene–TiO2 nanosheets (AMT) was prepared through a low-cost and facile hydrothermal oxidation process. The fabricated device exhibited a typical bipolar switching behavior and controllable SET voltage. Furthermore, we successfully demonstrated a 4-bit in-memory digital comparator with AMT RRAMs, which can replace five logic gates in a traditional approach. The AMT-based digital comparator may open the door for future integrated functions and applications in optoelectronic data storage and simplify the complex logic operations.
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