偶极子
原子物理学
电子
量子隧道
扫描隧道光谱
Atom(片上系统)
化学
吸附
光谱学
扫描隧道显微镜
分子物理学
材料科学
物理
纳米技术
光电子学
物理化学
有机化学
量子力学
计算机科学
嵌入式系统
作者
Qi‐Hui Wu,Shunqing Wu,C. I. Pakes
标识
DOI:10.1063/1674-0068/26/04/393-397
摘要
Resonant electron injection and first-principles calculations are utilized to study single-adsorbed selenium (Se) atom on a Si(111)-7×7 surface. Theoretical calculations indicate that a negative dipole of 0.61 eV forms toward the adsorbed Se atom due to electron transfer from the associated Si atoms. The formation of surface dipole modifies the effective tunneling barrier height and causes a shift in the energy of the resonant state formed in the vacuum gap between the tip and the sample surface. The experimental data imply that an outward negative surface dipole of 0.61 eV causes a resonant electron injection bias shift to high voltage of about 0.45 V.
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