Effects of Gate Dielectric and Process Treatments on the Electrical Characteristics of IGZO TFTs With Film Profile Engineering

In this paper, high-performance InGaZnO (IGZO) thin-film transistors were fabricated with film-profile-engineering scheme. The impacts of gate dielectric, O ₂ /Ar ratio during the sputtering of the IGZO, and annealing ambient on the device performance were investigated. It is found that the turn-ON voltage of the device is closely related to the gate dielectric material. For the devices with Al ₂ O ₃ as the gate dielectric, decent performance in terms of high ON/OFF current ratio (>10 ⁸ ), extremely steep subthreshold swing (62 mV/decade), and good mobility (19.8 cm ² /V·s) is obtained. The influences of O ₂ /Ar flow ratio are distinct for the devices with Al ₂ O ₃ gate oxide. Significant improvement in the stability of the devices to the environment is achieved with the anneal done in a low-pressure N ₂ ambient.