铟
微晶
材料科学
兴奋剂
化学计量学
光致发光
吸附
分析化学(期刊)
薄膜
化学工程
纳米技术
化学
光电子学
物理化学
冶金
色谱法
工程类
作者
K. Ravichandran,V. Senthamilselvi
标识
DOI:10.1016/j.apsusc.2013.01.045
摘要
The influence of indium (In) doping levels (0, 2, …, 8 at.%) on certain physical properties of cadmium sulphide (CdS) thin films deposited using an improved successive ionic layer adsorption and reaction (ISILAR) method has been studied. In this improved SILAR technique, a fresh anionic solution was introduced after a particular number of dipping cycles in order to achieve good stoichiometry. All the deposited films exhibited cubic phase with (1 1 1) plane as preferential orientation. The calculated crystallite size values are found to be decreased from 54.80 nm to 23.65 nm with the increase in In doping level. The optical study confirmed the good transparency (80%) of the film. A most compact and pinhole free smooth surface was observed for the CdS films with 8 at.% of In doping level. The perceived photoluminescence (PL) bands endorsed the lesser defect crystalline nature of the obtained CdS:In films. The chemical composition analysis (EDAX) showed the near stoichiometric nature of this ISILAR deposited CdS:In films.
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