光电二极管
探测器
光电子学
光学
材料科学
光电探测器
硅
辐射
基点
物理
作者
S. Varadaraajan,J. Matthews,J. F. Schetzina
摘要
The successful development of both discrete UV photodiodes and large-format UV imaging arrays consisting of 128·128 and 320·256 AlGaN p-i-n photodiodes is reported. Detectors and detector arrays have been successfully developed to sense radiation in the 300n365 nm visible-blind and 240n285 nm solar-blind portions of the UV spectral region. Details of the device synthesis and processing are discussed, including flip-chip bonding procedures employed to mate the UV photodiode arrays to silicon read-out integrated circuits (ROICs). A selection of UV images obtained using these new large-format UV digital imagers is included.
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