原子层沉积
图层(电子)
材料科学
沉积(地质)
薄膜
过程(计算)
蒙特卡罗方法
逐层
纵横比(航空)
分子
纳米技术
分子动力学
化学工程
计算机科学
光电子学
化学
计算化学
工程类
有机化学
数学
沉积物
古生物学
操作系统
统计
生物
作者
Matthias C. Schwille,Timo Schössler,Jonas Barth,Martin Knaut,Florian Schön,Arnim Höchst,M. Oettel,Johann W. Bartha
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2016-12-02
卷期号:35 (1)
被引量:35
摘要
The authors present a new method to determine film thicknesses and sticking coefficients (SC) of precursor molecules for atomic layer deposition (ALD) in high aspect ratio three dimensional (3D) geometries as they appear in microelectromechanical system manufacturing. The method combines a specifically designed experimental test structure with the theoretical predictions from a novel 3D Monte Carlo process simulation for large structures. The authors exemplify our method using Al2O3 and SiO2 ALD processes. SCs for trimethylaluminium and bis-diethyl aminosilane (BDEAS) are extracted. The SC for BDEAS is determined for the first time.
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