光致发光
材料科学
吸收(声学)
光谱学
紫外线
杂质
紫外可见光谱
吸收光谱法
碳纤维
硅
分析化学(期刊)
空位缺陷
光电子学
兴奋剂
光化学
氧气
化学
光学
结晶学
物理
有机化学
复合材料
色谱法
复合数
量子力学
作者
Rafael Dalmau,Samuel Kirby,J. Britt,R. Schlesser
出处
期刊:ECS transactions
[The Electrochemical Society]
日期:2022-09-30
卷期号:109 (8): 31-40
被引量:3
标识
DOI:10.1149/10908.0031ecst
摘要
Ultraviolet-visible (UV-Vis) spectroscopy was used to measure the optical absorption and emission from high-quality, 2-inch AlN substrates grown by physical vapor transport (PVT). Spatially uniform UV absorption coefficients below 20 cm -1 at 4.68 eV (265 nm) were demonstrated. The complementary spectroscopic data were used to elucidate the mechanism of UV absorption reduction in AlN containing high levels of the carbon impurity and co-doped with Si. Formation of a carbon-silicon defect complex, which shifted the absorption deeper in the UV, was demonstrated by photoluminescence (PL) emission and PL excitation (PLE) measurements. Additional deep levels in AlN related to cation vacancy complexes with oxygen were identified and discussed.
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