High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)2PbI4/GaN Heterojunction

Wide-bandgap semiconductors like GaN, known for their superior photoresponse and detection capabilities in the ultraviolet range, represent a foundational component in the design of advanced photodetectors, where the integration of materials with distinct spectral sensitivities into heterojunctions is pivotal for next-generation device innovation. A high-performance self-powered dual-mode ultraviolet photodetector based on a (PEA)