Ultraviolet Photodetector Fabrication with Low‐Power Dissipation Based on Organic Suboptimal Source‐Gated Transistor Architecture and MoO3‐Doped Pentacene

Organic field-effect transistor (OFET)-based photodetectors have been extensively studied owing to their potential applications in various fields, such as imaging, communication, and environmental monitoring. However, the traditional OFET structure brings about high power consumption. Furthermore, their low electrical performance and light sensitivity must be improved to detect harmful UV rays that accelerate skin aging and cause vision degradation. One strategy to fabricate high-performance phototransistors involves the introduction of molybdenum trioxide (MoO