A novel inverted T-shaped negative capacitance TFET for label-free biosensing application

The promising candidate for designing a highly sensitive biosensor is the negative capacitance tunneling field effect transistor (NCTFET). In this paper, to enhance the sensitivity and performance of the biosensor, we combined inverted T-shaped structure with NCTFET. We introduce negative capacitance effects by stacking ferroelectric materials on the gate dielectric layer. This paper presents a detailed comparative analysis of the proposed inverted T-shaped-NCTFET and TFET based biosensors for different dielectric constants and charge densities of the nano-cavity between the channel and source region locations of biosensor. Sensitivity has been measured in terms of drain current, on-state current, current switching ratio, electric field, and transconductance sensitivity. To establish a benchmark, the sensitivity of the proposed biosensor is also compared with the published literature in order to determine its effectiveness. It is conferred from the results that our biosensor can be a better alternative for the detection of the various neutral and charged biomolecules. All the device simulations are performed in a TCAD environment using a well-calibrated structure.