自旋电子学
凝聚态物理
Berry连接和曲率
磁化
电子相关
物理
拓扑(电路)
各向异性
电子结构
几何相位
电子
铁磁性
量子力学
磁场
数学
组合数学
作者
Jia Kang,Xiao-Jing Dong,Sheng-shi Li,Wei-xiao Ji,Changwen Zhang
出处
期刊:ACS applied nano materials
[American Chemical Society]
日期:2023-07-24
卷期号:6 (15): 14003-14010
被引量:8
标识
DOI:10.1021/acsanm.3c01848
摘要
Combining the nontrivial band topology with the intrinsic ferrovalley (FV), the valley-nonequilibrium quantum anomalous Hall effect (VQAHE) attracts growing attention both for its potential applications and basic physics. The electronic properties of some systems with localized orbital distribution and special structures could be influenced by the electronic correlation effect. In our work, the electronic correlation effect on the electronic structures for a Janus RuClF monolayer (ML) is investigated based on the first-principles calculations + U method. For the magnetization orientation along the out-of-plane (OOP) direction, RuClF ML undergoes FV to half-valley-metal (HVM) to VQAHE to HVM to FV transitions with increasing electron correlation effects. There is a chiral edge state connecting the valence and conduction bands and an integer Chern number (C = 1) when 2.52 < U < 2.55 eV. No obvious valley polarization and special VQAHE phases occur for the magnetization orientation along the in-plane (IP) direction. Regardless of IP or OOP magnetic anisotropy, the sign-reversible Berry curvature can be found with increasing U values. Notably, with increasing U values, the magnetization of RuClF ML varies from OOP to IP, and the key U value is approximately 2.41 eV. When taking into account the intrinsic magnetic anisotropy, no HVM and VQAHE states exist. This work finds the significance of magnetic anisotropy and electronic correlation effects in RuClF ML and highlights that electronic correlation effects can induce unusual topological phase transitions. Our consequences manifest that RuClF ML is an admirable material for topological electronic, spintronic, and valleytronic applications.
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