拓扑绝缘体
量子反常霍尔效应
拓扑序
Valleytronics公司
铁磁性
凝聚态物理
拓扑(电路)
量子霍尔效应
相(物质)
量子相变
相图
相变
物理
自旋电子学
量子力学
电子
数学
量子
组合数学
作者
Linke Cai,Runhan Li,Xinming Wu,Baibiao Huang,Ying Dai,Chengwang Niu
出处
期刊:Physical review
日期:2023-06-09
卷期号:107 (24)
被引量:11
标识
DOI:10.1103/physrevb.107.245116
摘要
Intrinsic magnetic topological insulators categorized by bulk-boundary correspondence are of significant fundamental and technological importance in topotronics. Yet the topological phase transition with variation of the bulk-boundary correspondence remains elusive. Here, using a tight-binding model and first-principles calculations, we demonstrate that $2H\text{\ensuremath{-}}M{\mathrm{Br}}_{2}$ $(M=\mathrm{Ru} \text{and} \mathrm{Os})$ monolayers are intrinsic ferromagnetic (FM) second-order topological insulators (SOTIs) distinguished by the emergence of well-localized nontrivial corner states. Remarkably, with giant valley polarization, we point out the possibilities of the two-dimensional FM SOTIs for displaying a rich topological phase diagram; that is, topological phase transitions from FM SOTIs to quantum anomalous Hall insulators and then to normal insulators emerge by engineering the valleys. The obtained quantum anomalous Hall effect is characterized by a nonzero Chern number $\mathcal{C}=\ifmmode\pm\else\textpm\fi{}1$ and one chiral edge state. Our results not only uncover a general framework to tune the bulk-boundary correspondence but also motivate a technological avenue to bridge valleytronics and magnetic topology with potential applications in topotronics and valleytronics.
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