Creating Ferroelectricity in Monoclinic (HfO2)1/(CeO2)1 Superlattices

Ferroelectricity in CMOS-compatible hafnia (HfO_{2}) is crucial for the fabrication of high-integration nonvolatile memory devices. However, the capture of ferroelectricity in HfO_{2} requires the stabilization of thermodynamically metastable orthorhombic or rhombohedral phases, which entails the introduction of defects (e.g., dopants and vacancies) and pays the price of crystal imperfections, causing unpleasant wake-up and fatigue effects. Here, we report a theoretical strategy on the realization of robust ferroelectricity in HfO_{2}-based ferroelectrics by designing a series of epitaxial (HfO_{2})_{1}/(CeO_{2})_{1} superlattices. The designed ferroelectric superlattices are defects free, and most importantly, on the base of the thermodynamically stable monoclinic phase of HfO_{2}. Consequently, this allows the creation of superior ferroelectric properties with an electric polarization >25 μC/cm^{2} and an ultralow polarization-switching energy barrier at ∼2.5 meV/atom. Our work may open an avenue toward the fabrication of high-performance HfO_{2}-based ferroelectric devices.