系统间交叉
单重态
电荷(物理)
激发态
荧光
材料科学
传输(计算)
光电子学
航程(航空)
原子物理学
光化学
化学
物理
光学
计算机科学
并行计算
复合材料
量子力学
作者
Zicong Situ,Xingqing Li,Honglei Gao,Jiawen Zhang,Yang Li,Fangming Zhao,Jie Kong,Hongmei Zhao,Meng Zhou,Wei Wang,Zhuoran Kuang,Andong Xia
标识
DOI:10.1021/acs.jpclett.4c00608
摘要
Multiresonance thermally activated delayed fluorescence (MR-TADF) emitters are excellent candidates for high-performance organic light-emitting diodes (OLEDs) due to their narrowband emission properties. However, the inherent mechanism of regulating the rate of intersystem crossing (ISC) is ambiguous in certain MR-TADF skeletons. Herein, we propose a mechanism of accelerating ISC in B/S-based MR-TADF emitters by peripheral modifications of electron-donating groups (EDGs) without affecting the narrowband emission property. The long-range charge transfer (LRCT) stems from the introduced EDG leading to high-lying singlet and triplet excited states. The ISC process is accelerated by the enhanced spin–orbital coupling (SOC) between the singlet short-range charge transfer (SRCT) and triplet LRCT manifolds. Meanwhile, the narrowband emission derived from the MR-type SRCT state is well retained as expected in the peripherally modified MR-TADF emitters. This work reveals the regulation mechanism of photophysical properties by high-lying LRCT excited states and provides a significant theoretical basis for modulating the rate of ISC in the further design of MR-TADF materials.
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